The Japan Society of Applied Physics

2022 International Conference on Solid State Devices and Materials

2022 International Conference on Solid State Devices and Materials

Sep 26, 2022 - Dec 23, 2022
Makuhari Messe

11:30 AM - 11:45 AM

[J-8-03] Experimental Demonstration of the Surge Current Capability of Embedded SBDs in 1.2-kV SiC SBD-integrated Trench MOSFETs with Ti and Ni as Schottky Metals

〇Yudai Kitamura1, Takeshi Tawara2, Shinsuke Harada2, Hiroshi Yano1, Noriyuki Iwamuro1 (1. Univ. of Tsukuba (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-8-03

This study investigates, for the first time, the surge current capabilities of embedded Schottky Barrier Diodes (SBDs) in a 1.2-kV SiC SBD-integrated trench MOSFET (SWITCH-MOS) with Ti and Ni, as Schottky metals, and demonstrates sufficiently high SBD surge current capabilities when a higher Schottky barrier height of Ni was used.