This study describes the static and dynamic char-acteristics and withstanding capabilities of two types of 1.2-kV SiC SBD-integrated MOSFET, which have different SBD areas, using experimental validation and numerical simulations. In the MOSFETs with a larger SBD area, unipolar operation in the SBD during diode forward operation was maintained at higher forward currents; as a result, the MOSFETs show lower re-verse recovery and turn-on losses. However, the MOSFETs with a larger SBD area showed higher leakage current through the SBD during short-circuit transients owing to a higher electric field at the SBD, resulting in less short-circuit withstanding capability.