3:00 PM - 3:15 PM

[K-2-05 (Late News)] A Z-gate Layout MOSFET Design and Verification of Radiation Hardness against γ-ray Total Ionizing Dose Effect

〇Kaito Kuroki¹, Arisa Kimura¹, Kenji Hirakawa², Masayuki Iwase², Munehiro Ogasawara², Takashi Yoda², Noboru Ishihara^1,2, Hiroyuki Ito^1,2 (1. Nano Sensing Unit, Inst. of Innovative Res. , Tokyo Inst. of Tech. (Japan), 2. Lab. for Future Interdisciplinary Res. of Sci. and Tech. , Tokyo Inst. of Tech. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.K-2-05