11:15 〜 11:30
[K-8-03] Double Modulation Lock-in Based Stimulated Raman Scattering Detection Method Using a Charge Modulator CMOS Image Sensor
Presentation style: Online
This paper reports a design of the Stimulated Raman Scattering (SRS) detection method using a high-speed lock-in CMOS image sensor. Since the SRS signal is very weak, a two-stage fully-differential switched-capacitor integrator is designed to cancel offset light and amplify the SRS signal. The sensitivity of the proposed method is shown based on the relative intensity of up to ΔISRS / Ioffset = 10-6. The two-stage readout mechanism reduces the circuit's low-frequency noise by approximately 1-decade, which improves the dynamic range. The advantage of the double-modulation technique is that the system's low-frequency noise is reduced, where the first modulation is for laser intensity noise and the second is for circuit noise.
