[A-2-04] Controllability of Luminescence Wavelength from GeSn Wires Fabricated by Laser Zone Melting on Quartz Substrates

〇Takayoshi Shimura¹, Ryoga Yamaguchi¹, Naoto Tabuchi¹, Masato Kondo¹, Mizuki Kuniyoshi², Takuji Hosoi³, Takuma Kobayashi¹, Heiji Watanabe¹ (1. Osaka Univ. (Japan), 2. ULVAC-Osaka Univ. Joint Res. Lab. for Future Tech. (Japan), 3. Kwansei Gakuin Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 15:00 〜 15:15 |PDF ダウンロード

[A-2-05] Optical Properties of Innovative GeSe_1-xTe_x Phase-Change Material Thin Films for On-Chip Active Components, Non-Linear and Neuromorphic Applications

〇Anthony Albanese¹, Martina Tomelleri¹, Jean-Baptiste Dory¹, Christophe Licitra¹, Benoît Charbonnier¹, Jean-Baptiste Jager², Aurélien Coillet³, Benoît Cluzel³, Pierre Noé¹ (1. Univ. Grenoble-Alpes, CEA-LETI (France), 2. Univ. Grenoble-Alpes, CEA-IRIG (France), 3. Univ. Bourgogne, ICB, UMR 6303 CNRS (France))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 15:15 〜 15:30 |PDF ダウンロード

[A-5-01] Ultra-Low Voltage Fin-Shaped AlGaN/GaN Ultraviolet Photodetector with Enhanced Frequency Responses

〇Yuhan Pu¹, Yung C. Liang¹ (1. National Univ. of Singapore (Singapore))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 10:45 〜 11:00 |PDF ダウンロード

[A-5-02] Study on the Optical Characteristics of Light-Emitting HEMT with Different Quantum Well Locations

〇Yao-Luen Shen¹, Chih-Yao Chang¹, Po-Liang Chen¹, Cheng-Chan Tai¹, Tian-Li Wu², Yuh-Renn Wu³, Chih-Fang Huang¹ (1. National Tsing-Hua Univ. (Taiwan), 2. National Yang Ming Chiao Tung Univ. (Taiwan), 3. National Taiwan Univ. (Taiwan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 11:00 〜 11:15 |PDF ダウンロード

[A-5-03] Fabrication and optical characterization of GaN microdisk cavites undercut by laser-assisted photo-electrochemical etching

〇Sho Sosumi¹, Kenshin Shimoyoshi¹, Kazuo Uchida¹, Takeyoshi Tajiri¹ (1. The University of Electro-Communications (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 11:15 〜 11:30 |PDF ダウンロード

[A-5-04] [No Show] Effect of Modulation Mg Doped p-Interlayer in 230 nm Far-UVC AlGaN LightEmitting Diodes with Transparent p-Contact Layer

〇Noritoshi Maeda¹, Yukio Kashima¹, Eriko Matsuura¹, Yasushi Iwaisako², Hideki Hirayama¹ (1. RIKEN (Japan), 2. Nippon Tungsten (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 11:30 〜 11:45 |PDF ダウンロード

[A-5-05] Significant Improvement of Injection Efficiency in Deep-UV LD Structures by Light Mg Doping in p-Core Layer

〇Yuri Itokazu^1,2, Noritoshi Maeda¹, Hiroyuki Yaguchi², Hideki Hirayama¹ (1. RIKEN (Japan), 2. Saitama Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 11:45 〜 12:00 |PDF ダウンロード

[A-5-06] [No Show] Improvement of Injection Efficiency by Modulation Doping into p-Side Waveguide Layer in 290 nm Laser Diode Structures

〇Noritoshi Maeda¹, Yukio Kashima¹, Eriko Matsuura¹, Yasushi Iwaisako², Hideki Hirayama¹ (1. RIKEN (Japan), 2. Nippon Tungsten (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 12:00 〜 12:15 |PDF ダウンロード

[A-6-01] 1060nm Single-mode Bottom Emitting VCSEL Array with Intra-cavity Metal-aperture for Multi-core Fiber Co-packaged Optics Transceivers

〇Liang Dong¹, Xiaodong Gu^2,1, Fumio Koyama¹ (1. Tokyo Inst. of Tech. (Japan), 2. Ambition Photonics Inc. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 13:30 〜 13:45 |PDF ダウンロード

[A-6-02] All III-arsenide 1.6 μm-band InAs quantum dot lasers
on InP(001) with a low threshold current density

〇Jinkwan Kwoen¹, Natalia Morais¹, Wenbo Zhan¹, Satoshi Iwamoto^1,2, Yasuhiko Arakawa¹ (1. NanoQuine, Univ. of Tokyo (Japan), 2. RCAST, Univ. of Tokyo (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 13:45 〜 14:00 |PDF ダウンロード