The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

2:30 PM - 2:45 PM

[A-1-02] Growth and Characterization of SnS Ferroelectric Phase for BPVE Measurement

○Ryo Nanae1, Satsuki Kitamura1, Yih-Ren Chang1,2, Tomonori Nishimura1, Keisuke Shinokita3, Kazunari Matsuda3, Kosuke Nagashio1 (1. the Univ. of Tokyo (Japan), 2. RIKEN (Japan), 3. Kyoto Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.A-1-02

In this research, large and ferroelectric SnS crystals were grown on van der Waals HOPG substrates for bulk photovoltaic effect (BPVE) measurements. These crystals were characterized by HAADF-STEM, SHG and Raman spectroscopy, so the ferroelectric phase of SnS was uniquely identified as β’-phase. Furthermore, thermal stability of β’- SnS on HOPG suggests that the curie temperature of β’-SnS is between 473 K and 573 K, which is higher than that estimated by the theoretical calculation. The present large β’-SnS crystals with noncentrosymmetry can be suitably used for BPVE measurement.