Self-Aligned WO x S/D Contacts to Gate Stacks with TiO x Nucleation Layer by Multiple-Deposition Method in WSe 2 pFETs

Ryosuke Kajikawa

doi:https://doi.org/10.7567/SSDM.2023.A-2-03

16:30 〜 16:45

[A-2-03] Self-Aligned WO _x S/D Contacts to Gate Stacks with TiO _x Nucleation Layer by Multiple-Deposition Method in WSe ₂ pFETs

^○Ryosuke Kajikawa¹, Takamasa Kawanago¹, Iriya Muneta¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1. Tokyo Institute of Technology (Japan))

https://doi.org/10.7567/SSDM.2023.A-2-03

This study reports a self-aligned process for fabrication of top gate structure in WSe₂ pFET. Multiple deposition of TiO_x nucleation layer combined with O₂ radical exposure to form WO_x for S/D contacts using gate stacks as a mask was applied to develop the self-aligned process. The annealing process after formation of TiO_x as nucleation layer is important role in the top gate operation. On the other hand, top gate operation was not observed without annealing after formation of TiO_x. This study opens up interesting directions for constructing TMDC-based CMOS integrated circuit.

2023 International Conference on Solid State Devices and Materials

[A-2-03] Self-Aligned WO x S/D Contacts to Gate Stacks with TiO x Nucleation Layer by Multiple-Deposition Method in WSe 2 pFETs

[A-2-03] Self-Aligned WO _x S/D Contacts to Gate Stacks with TiO _x Nucleation Layer by Multiple-Deposition Method in WSe ₂ pFETs