17:00 〜 17:15
[A-2-05] High-performance CMOS inverter based on MoTe 2-FETs achieved by contact doping and channel encapsulation
High contact resistance limits the application of electrical devices based on 2D materials like transition metal dichalcogenide (TMDC). Here, a complementary metal–oxide–semiconductor (CMOS) inverter with high performance, which consists of an n and p-MoTe2 FET, was successfully fabricated by using contact doping and channel encapsulation methods. Contact doping is to reduce contact resistance which is achieved by laser irradiation. The channel of MoTe2-FET was encapsulated by h-BN to improve carrier mobility and device stability. The inverter shows a very high gain value of 32 at Vdd = 4 V at room temperature.