The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

5:15 PM - 5:30 PM

[A-2-06 (Late News)] Multilevel Storage Enabled by Light Erasable GNDs Floating Gate Transistor with MoS 2 Channel

○Han Hsiang Tai1, Yu Yuan Su1, Jer Chyi Wang1,2,3, Wen Hao Chang4,5, Chao Sung Lai1,6,7 (1. Department of Electronic Engineering, Chang Gung Univ. (Taiwan), 2. Department of Neurosurgery, Chang Gung Memorial Hospital (Taiwan), 3. Department of Electronic Engineering, Ming Chi Univ. of Tech. (Taiwan), 4. Research Center for Applied Sciences, Academia Sinica (Taiwan), 5. Department of Electrophysics, National Yang Ming Chiao Tung Univ. (Taiwan), 6.Department of Nephrology, Chang Gung Memorial Hospital (Taiwan), 7.Department of Materials Engineering, Ming Chi Univ. of Tech. (Taiwan))

https://doi.org/10.7567/SSDM.2023.A-2-06

The photosensitive GNDs floating-gate transistors with MoS2 channels demonstrate excellent electrical pro-graming and optical erasing properties. The number of layers for MoS2 and graphene was determined using Ra-man spectroscopy. Devices were fabricated both without and with GNDs to assess the charge storage capability of the GNDs. Moreover, multi-level charge storage was achieved by utilizing light sources of varying wave-lengths and powers. Additionally, the device exhibited 73% charge storage after 10000 s and demonstrated over 300 operational cycles. The development of this photo-sensitive GNDs floating-gate transistor with a MoS2 channel holds promise for advancing future memory technologies.