The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

09:30 〜 09:45

[A-3-02] Ultra-High Packing Density Vertical GaN Nanocolumn SBDs using Bottom-Up Growth Approach

○Hiroyuki Shimada1, Hironobu Kariyazono1, Yohei Nakagawa1, Shinji Terao1, Kentaro Takayanagi1, Koichiro Akasaka1, Shunsuke Ishizawa1, Koichi Morozumi2, Rie Togashi3, Katsumi Kishino3 (1. Core Tech. Development Dept., Seiko Epson Corp. (Japan), 2. Material Analysis & CAE Center, Seiko Epson Corp. (Japan), 3. Sophia Nanotech. Res. Center, Sophia Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.A-3-02

We have fabricated vertical Gallium Nitride (GaN) nanocolumn Schottky barrier diodes (NC-SBDs) on a GaN-template on sapphire, with a packing density equivalent to over 10 million columns/mm2, using Ti mask selective area growth (SAG) by rf-plasma-assisted molecular beam epitaxy (rf-MBE). The fabricated NC-SBDs with 250 nm-diameter and drift length of 1.3 μm have a breakdown voltage of 260 V. Since the dielectric reduced surface field (RESURF) effect has not optimized in this work, further improvements can be expected in the future.