Evaluation of Si and Ge Segregation from Si <sub>0.2</sub>Ge <sub>0.8</sub>(111) through Al and Ag Layer

Taiki Sakai

doi:https://doi.org/10.7567/SSDM.2023.A-3-03

09:45 〜 10:00

[A-3-03] Evaluation of Si and Ge Segregation from Si _0.2Ge _0.8(111) through Al and Ag Layer

^○Taiki Sakai¹, Akio Ohta², Noriyuki Taoka³, Junji Yuhara¹, Katsunori Makihara¹, Yuji Yamamoto⁴, Wei-chen Wen⁴, Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. Fukuoka Univ. (Japan), 3. Aichi Inst. of Tech. (Japan), 4. IHP (Germany))

https://doi.org/10.7567/SSDM.2023.A-3-03

Controls of diffusion and segregation of group IV element (Si, Ge) through a thin metal layer from a stacked structure is one of the effective techniques to grow an ultrathin crystal and a 2D crystal. In this study, a 30 nm-thick Al and Ag layer was deposited on an 85 nm-thick heteroepitaxial Si_0.2Ge_0.8(111) layer, and the surface segregation of Si and Ge atoms by annealing was evaluated by PES and XPS analyses. Segregated Si and Ge on Al surface were covered with Al oxide layer, and oxidation of segregated Ge on Al was hardly detected after annealing.

2023 International Conference on Solid State Devices and Materials

[A-3-03] Evaluation of Si and Ge Segregation from Si 0.2Ge 0.8(111) through Al and Ag Layer

[A-3-03] Evaluation of Si and Ge Segregation from Si _0.2Ge _0.8(111) through Al and Ag Layer