The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

11:15 AM - 11:30 AM

[A-4-03] Strong Gate Modulation Effect in Nanoscale TiN Channels

○Yu- An Lai1, Chin-Te Wang1, Yu-An Chou1, Shun-Tsung Lo1, Thi Hien Do1, Sheng-Di Lin1 (1. National Yang Ming Chiao Tung University (Taiwan))

https://doi.org/10.7567/SSDM.2023.A-4-03

Huge modulation rate of TiN channel resistance has been achieved at room temperature. The nanowire channels are fabricated on ALD-prepared 3-nm-thick TiN film with e beam lithography and dry etching. By shrinking the channel width, a resistance modulation rate of up to 220.49% has been obtained with the back-gated nanowires. An anomalous non-linear I-V curve is observed and discussed.