The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

11:30 AM - 11:45 AM

[A-6-03] Heterogeneous Integration of 32 × 32 1S1R Crossbar Array using 2D Hafnium Diselenide on Si Platform and its Compute-in-Memory Hardware Featuring Low Latency and High Energy Efficiency

○Samarth Jain1, Sifan Li1, Jianze Wang1, Xuanyao Fong1, Kah-Wee Ang1,2 (1. National University of Singapore (Singapore), 2. Institute of Materials Research and Engineering, A*STAR (Singapore))

https://doi.org/10.7567/SSDM.2023.A-6-03

For the first time, we report a heterogeneous 1 kbit (32 × 32) crossbar array (CBA) combining silicon (Si) based selectors and memristors made of two-dimensional (2D) hafnium diselenide (HfSe2). The integration of one-selector-one-memristor (1S1R) via three-dimensional (3D) stacking of 2D HfSe2 achieves low energy (70 pJ) write/read operations and fast speed performance (< 20 ns). Additionally, a low-power sensing circuit is realized to address the power consumption limitation of ADC for the scaling of CBA architecture. The ADC-free circuit comprises a high-accuracy differential subtractor to minimize quantization loss and a time-to-digital converter (TDC)-based converter using FPGA. The hardware successful achieves scalable, multiplexer (MUX)-free parallel compute-in-memory (CIM) and image processing.