The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

14:15 〜 14:30

[A-7-03] Stack control of Bi/Au bilayer electrodes toward p-type WSe 2 FET

○Ryuichi Nakajima1, Tomonori Nishimura1, Keiji Ueno2, Yasumitsu Miyata3, Kosuke Nagashio1 (1. The Univ. of Tokyo (Japan), 2. Saitama Univ. (Japan), 3. Tokyo Metropolitan Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.A-7-03

To acquire high performance p-type FET, suppressing Fermi level pinning is required. From XPS and Raman measurements, the actual origin of pinning of Au on WSe2 was found to be the chemical bonding between WSe2 and Au. To obtain ideal vdW contact, inserting thin Bi layer to separate the Au-Se bonding and subsequent removing Bi from interface by surface segregation were proposed. This strategy was demonstrated on WSe2 FET with Bi/Au bilayer electrodes.