14:30 〜 14:45
[A-7-04] Ultra-Steep-Slope P-Type Threshold Switch Field-Effect Transistors
High energy efficiency is urgently required in the development of future integrated circuits. However, the continuous miniaturization of complementary metal–oxide-semiconductor (CMOS) devices is limited by the fundamental Boltzmann limit. Herein, the first p-type 2D-materials based threshold switch (TS) field effect transistor with ultra-steep slope is reported. Collective behavior is achieved by integrating the channel and the TS. The proposed device achieves an ultra-low SS (3.18 mV/dec) and a high on/off ratio of 106 with superior reliability. Significantly, the proposed device is expected to pave the way for the development of large-scale CMOS circuits based on energy efficient transistors.