The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

15:30 〜 15:45

[A-8-01] Dual gating of hBN/bilayer-graphene superlattices: band-engineering and doping a Dirac material

○Yoshifumi Morita1, Takuya Iwasaki2, Kenji Watanabe2, Takashi Taniguchi2 (1. Gunma Univ. (Japan), 2. National Inst. for Material Sci. (Japan))

https://doi.org/10.7567/SSDM.2023.A-8-01

We shall discuss transport properties of dual-gatedhexagonal boron nitride (hBN)/bilayer-graphene (BLG) superlattices. A detailed study of the hBN/BLG superlattices should pave the way toward the “global phase diagram” with a variety of broken symmetries.