4:00 PM - 4:15 PM
[A-8-03] Exploiting Transport Properties of Colloidal Quantum Dots Thin Films to Operate Multiple Photodiodes Matrices Simultaneously
Recent advances on Colloidal quantum dots (CQD) image sensors have shown that CQD technology can represent a reliable low-cost alternative to image sensors using III-V compounds as photosensitive materials for NIR and SWIR imaging. Most of these image sensors rely on the integration of continuous CQD thin films on top of the pixel circuitry, enabling to improve the pixels density of the CQD image sensors, without compromising performances as quantum efficiency or electrical cross-talk. In this paper, we performed numerical simulations to study how we can use electric field to change charges distribution inside CQD thin films, allowing operations like effective pitch modulation or charges binning, allowing two physically interleaved photodiodes matrices to operate simultaneously.