The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

4:45 PM - 5:00 PM

[B-2-03] Aharonov-Bohm-type oscillations in selectively-grown polymorphic core/shell GaAs/InAs nanowires

○Farah Basaric1,4, Anton Faustmann1,4, Alexander Pawlis2,4, Patrick Zellekens3,5,6, Russel Deacon3,5, Benjamin Bennemann2,4, Detlev Grützmacher2,1,4, Koji Ishibashi3,5, Thomas Schäpers1,4 (1. Peter Grünberg Inst. 9, Res. center Jülich (Germany), 2. Peter Grünberg Inst. 10, Res. center Jülich (Germany), 3. RIKEN Center for Emergent Matter Sci. (Japan), 4. JARA-Fundamentals of Future Info. Tech., Jülich-Aachen Res. Alliance, Research center Jülich and RWTH Aachen Univ. (Germany), 5. RIKEN Advanced Device Lab. (Japan), 6.Special Postdoctoral Res. Program (SPDR), RIKEN (Germany))

https://doi.org/10.7567/SSDM.2023.B-2-03

We investigate the transport properties of selectively-grown GaAs/InAs core/shell nanowires using a SiO2 covered Si (111) substrate patterned by hole arrays. The polymorphic nanowires are grown by molecular beam epitaxy. Magnetotransport measurements in a magnetic field aligned along the nanowire axis reveal pronounced Aharonov-Bohm-type oscillations. The transport properties are investigated as a function of gate voltage and at different temperatures. Additionally, first results of Josephson junctions based on GaAs/InAs core/shell nanowires and an in-situ deposited Al half-shell are reported.