The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

9:45 AM - 10:00 AM

[B-3-04 (Late News)] Ferromagnetic Semiconductor (Ga,Fe)Sb with Very High Curie Temperature (530 K) Grown on Vicinal GaAs(001) Substrates

○Kenta Takabayashi1, Masaaki Tanaka2,3, Pham Nam Hai1,3 (1. Department of Electrical and Electronic Eng., Tokyo Inst. of Tech. (Japan), 2. Department of Electrical Engineering and Info. System, The Univ. of Tokyo, Tokyo 113-8656 (Japan), 3. Center for Spintronics Res. Network (CSRN), The Univ. of Tokyo, Tokyo 113-8656 (Japan))

https://doi.org/10.7567/SSDM.2023.B-3-04

We studied heavily Fe-doped (Ga0.76,Fe0.24)Sb thin films grown on vicinal GaAs(001) substrates with very high Curie temperature (TC). Reflection infra-red (IR) magnetic circular dichroism (MCD) spectroscopy shows the similar spectrum to that of other Fe-doped (Ga,Fe)Sb grown on just-cut GaAs(001) substrates, indicating that our (Ga0.76,Fe0.24)Sb is an intrinsic ferromagnetic semiconductor (FMS). Arrott plots of the IR-MCD vs. magnetic field hysteresis indicate a very high TC = 530 K, which is the highest TC reported so far for FMSs.