The Japan Society of Applied Physics

10:45 〜 11:15

[B-4-01 (Invited)] Electron- and Magnon-Mediated Spin Torque based on Topological Materials

Yi Wang1, Fanyu Meng1, Ying Feng1, Wenbo Li1, Tuo Zhang1, Hyunsoo Yang2 (1. Dalian University of Technology (China), 2. National University of Singapore (Singapore))

https://doi.org/10.7567/SSDM.2023.B-4-01

Widespread applications of magnetic devices, such as magnetic random-access memory (MRAM), logic-in memory and neuromorphic computing devices, require an efficient way to control the magnetization. Spin torque, i.e. spin-orbit torque associated with electron spin and magnon torque involving magnons, opens up a new way to realize magnetization switching, which is crucial for implementing device functionalities. The topological materials, such as topological insulators and Weyl semimetals, are emerging spin torque materials because of their non-trivial band structures and expected giant spin torque. Here, we report the spin torque in topological materials, and the room-temperature magnetization switching by the electron- and magnon-mediated spin torque.