The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

12:00 〜 12:15

[B-6-05] Novel WN x/C Interfacial Layer on Hf 0.5Zr 0.5O 2 Ferroelectric Memory

○Abhijit Aich1, Asim Senapati1, Zhao- Feng Lou2, Fu- Sheng Chang2, Yu- Rui Chen2, Yi- Pin Chen1,3, Shih- Yin Huang3,4, Siddheswar Maikap1,3, Chee- Wee Liu2, Min- Hung Lee2 (1. Chang Gung Univ. (Taiwan), 2. National Taiwan Univ. (Taiwan), 3. Keelung Chang Gung Memorial Hospital (Taiwan), 4. Chang Gung University College of Medicine (Taiwan))

https://doi.org/10.7567/SSDM.2023.B-6-05

A carbon (C) interfacial layer (IL) in Ru/WNx/C/Hf0.5Zr0.5O2(HZO)/TiN capacitor shows less fatigue than the device with WNx IL after 108 cycles under ±2 MV/cm and a 2Pr of 14.5 µC/cm2 after 10 years of retention. The WNx/C IL memory shows enhanced 2Pr value than pure Ru electrode owing to controlling oxygen vacancy in HZO film, which is useful for future low power non-volatile memory application.