The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

9:30 AM - 9:45 AM

[C-3-02] High-Performance Submicron IGZO TFTs Fabricated with a Maximum Temperature of 110 ℃

Horng-Chih Lin1, ○Po-Jung Lin1, Yu-Chi Chen1, Ping-Che Liu1, Chien-Wei Chen2, Chi-Chung Kei2, Pei-Wen Li1 (1. National Yang Ming Chiao Tung University (Taiwan), 2. Taiwan Instrument Research Institute (Taiwan))

https://doi.org/10.7567/SSDM.2023.C-3-02

We have successfully demonstrated a low-temperature process (Tmax=110 oC) for fabricating submicron IGZO TFTs. In this newly-refined fabrication approach, Al2O3 gate-oxide deposited at 110 oC using atomic layer deposition (ALD) is employed which allows us to utilize an organic photoresist bridge for tailoring the profiles of major thin films in the devices. Good device performance with field-effect mobility of 12.1 cm2/V-s is demonstrated in the fabricated devices.