Synthesis of CuAlO <sub>2</sub>/Si heterostructures by DPDS-assisted LBL approach and their transistor characteristics

MEHDI ALI

doi:https://doi.org/10.7567/SSDM.2023.C-3-04

10:00 AM - 10:15 AM

[C-3-04] Synthesis of CuAlO ₂/Si heterostructures by DPDS-assisted LBL approach and their transistor characteristics

^○MEHDI ALI¹, Daiki Yamashita¹, Hideo Isshiki¹ (1. The University of Electro -Communications, Tokyo- Japan (Japan))

https://doi.org/10.7567/SSDM.2023.C-3-04

A CuAlO₂ (CAO) p-type thin film transistor (TFT) is demonstrated. CAO with dominance phase along the (004) plane was prepared by digitally processed DC sputtering (DPDS) under a layer-by-layer (LBL) approach. The fabricated CAO p-TFT exhibits field effect mobility of 4.24 cm²V^-1s^-1 (that is the highest to our knowledge). The novel approach (i.e., DPDS-assisted LBL) for a controlled stacking deposition is found to be a good route in the growth of CAO thin film.

2023 International Conference on Solid State Devices and Materials

[C-3-04] Synthesis of CuAlO 2/Si heterostructures by DPDS-assisted LBL approach and their transistor characteristics

[C-3-04] Synthesis of CuAlO ₂/Si heterostructures by DPDS-assisted LBL approach and their transistor characteristics