BaSi₂ is an earth-abundant solar cell material with a limiting efficiency of 32%. Close-spaced evaporation allows epitaxial growth on Si substrates with scalability to large areas. In this study, the electrical properties and excess carrier lifetime of BaSi₂ films grown on Si(100) and Si(111) substrates were investigated. (100) oriented epitaxial films were grown on both Si(100) and Si(111) substrates. The films (mostly n-type) exhibited carrier densities in the range of 10¹⁴–10¹⁸ cm⁻³. The excess carrier lifetime analyzed from the photoconductivity under constant illumination was longer than 2 μs, suggesting the applicability to high-efficiency solar cells.