11:30 AM - 11:45 AM
[C-6-03] The Formation of Defect State in Mo-doped BiVO 4 Photoanode to Generate a Higher Performance of PEC System
Doping the semiconductor materials is one of the strategies to modify the electronic properties improving the performance in photoanode applications. Molybdenum (Mo) doped Bismuth Vanadate (BiVO4) photoanode was fabricated using a scalable deposition method by single target RF sputtering. In the presence of Mo dopant, the valence band structure forms defect state where d-band are partially occupied by V4+ providing the extra electrons state near the conduction band minimum. The property allows the fermi level position shifted from 1.75 eV to the 2.19 eV from the valence band edge. Thus, the performance improved from 0.6 mA/cm2 for BiVO4 to 1.3 mA/cm2 for Mo:BiVO4 at 1.23 V RHE in 1.5 AM ensuring a more efficient photoanode to generate oxygen in the PEC system.