The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

14:30 〜 14:45

[C-7-04] Demonstration of Scalability of a Planar Silicon Integrated Thermoelectric Device

○Shuhei Arai1, Md Mehdee Hasan Mahfuz1, Takeo Matsuki1,2, Taknobu Watanabe1 (1. Waseda Univ. (Japan), 2. Agency of Indus. Sci. and Tech. (Japan))

https://doi.org/10.7567/SSDM.2023.C-7-04

In a planar thermoelectric (TE) device using Si nanowires (Si-NWs), the scaling effectit is predicted where that the areal power density improves by shortening the length of Si-NW. In this study, we fabricated integrated TE devices with varying the length of Si-NWs between 250 nm to 1000 nm and evaluated their power generation capacity. According to the experimental result, the shortest Si-NW length device shows the highest areal power density. This is because short Si-NWs can reduce electrical resistance and enable high-density integration. This study demonstrated the scaling effect and provided guidelines for the structural design of the planar integrated TE device.