Development of high-performance Sn Based Halide Perovskite Transistors

Yong-Young Noh

doi:https://doi.org/10.7567/SSDM.2023.D-2-01

4:00 PM - 4:30 PM

[D-2-01 (Invited)] Development of high-performance Sn Based Halide Perovskite Transistors

^○Yong-Young Noh¹ (1. Pohang Univ. of Sci. and Tech. (POSTECH) (Korea))

https://doi.org/10.7567/SSDM.2023.D-2-01

Here, I would like to introduce a general overview and recent progress of our group of p-type Sn-based metal halide perovskites for the application of field-effect transistors (FETs).

2023 International Conference on Solid State Devices and Materials

[D-2-01 (Invited)] Development of high-performance Sn Based Halide Perovskite Transistors