Enhancing Performance of High- <i>k</i> Engineered Dual-gate Ion-Sensitive Field-Effect Transistor through Template Transfer of Electrospun Polyvinylpyr-rolidone Nanofibers onto Random-Network Si Nanowire Channel

Tae-Hwan Hyun

doi:https://doi.org/10.7567/SSDM.2023.D-5-04

9:45 AM - 10:00 AM

[D-5-04] Enhancing Performance of High- k Engineered Dual-gate Ion-Sensitive Field-Effect Transistor through Template Transfer of Electrospun Polyvinylpyr-rolidone Nanofibers onto Random-Network Si Nanowire Channel

^○Tae-Hwan Hyun¹, Won-Ju Cho¹ (1. Kwangwoon Univ. (Korea))

https://doi.org/10.7567/SSDM.2023.D-5-04

In this study, we developed a high-k engineered du-al-gate (DG) ion-sensitive field-effect transistor (FET) with a random network Si nanowire (SiNW) channel, achieved through template transfer of polyvinylpyrroli-done nanofibers, to enhance the sensing characteristics. A comparison between the SiNW channel device and a con-ventional film channel device revealed a remarkable 153% increase in pH sensitivity (378.17 mV/pH) for the SiNW channel device (247.05 mV/pH), demonstrating superior stability. Our findings indicate the potential of the proposed high-k engineered SiNW channel DG FET as a high-performance biosensor platform.

2023 International Conference on Solid State Devices and Materials

[D-5-04] Enhancing Performance of High- k Engineered Dual-gate Ion-Sensitive Field-Effect Transistor through Template Transfer of Electrospun Polyvinylpyr-rolidone Nanofibers onto Random-Network Si Nanowire Channel