Thin film ionic liquid crystal (ILC) was first applied to the resistive random-access memory (ReRAM) device as a resistive switching layer, with nonvolatile operation, showing bipolar resistive switching between the high and low resistance states with low switching voltages when the ILC thin film was in the smectic A phase, while no switching behavior was observed in the crystal phase. Moreover, the formation and rupture of trap-assisted conductive filaments in the ILC layer dominating the device operation was suggested by detailed analyses of the current-voltage characteristics in the resistant states.