Improvement of Cell Transistors in High-k/ Metal-Gate Peripheral Transistors DRAM Technology for High Performance Graphic Memories

Dongkyu Jang

doi:https://doi.org/10.7567/SSDM.2023.E-3-01

09:00 〜 09:15

[E-3-01] Improvement of Cell Transistors in High-k/ Metal-Gate Peripheral Transistors DRAM Technology for High Performance Graphic Memories

^○Dongkyu Jang¹, Jieun Lee¹, Daekyum Kim¹, Kyoungrock Nho¹, Inkyum Lee¹, Shindeuk Kim¹, Taehoon Park¹ (1. Samsung Electronics Corp. (Korea))

https://doi.org/10.7567/SSDM.2023.E-3-01

We investigated characteristics and reliabilities of cell transistors (Cell Tr) in graphic DRAM with high-k/ metal gate (HKMG) peripheral transistors (Peri Tr), and we propose reliable and robust Cell Tr for the HKMG peripheral scheme. It is important to guarantee sufficient immunity to the last data in row pre-charge time (tRDL) which is most challengeable degradation in graphic memories to obtain the high performance characteristics of low power and high speed. In this paper, we present the mechanism of tRDL degradation and behavior of Cell Tr according to the change of thermal budget.

2023 International Conference on Solid State Devices and Materials

[E-3-01] Improvement of Cell Transistors in High-k/ Metal-Gate Peripheral Transistors DRAM Technology for High Performance Graphic Memories