The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

11:30 〜 11:45

[E-4-03] The Effect of Crystallinity of Channel Silicon Formed by Two Different Metal Induced Lateral Crystallization (MILC) on Cell Current Distribution in 3D Flash Memory

○Haruki Matsuo1, Hiroki Yamashita1, Yusuke Shimada1, Noritaka Ishihara1, Satoshi Seto1, Sho Morita1, Masafumi Ukishima1, Kazuya Uejima1, Yusuke Arayashiki1, Suzuka Kajiwara1, Akiyuki Murayama1, Katsuya Nishiyama1, Kikuko Suhimae1, Shinji Mori1, Yuta Saito1, Takeshi Shundo1, Yurika Kanno1, Hiroyuki Kamiya2, Yasuhiro Uchiyama1, Fumiki Aisou1, Katsuyuki Sekine1, Norio Ohtani1 (1. Kioxia Corp. (Japan), 2. Western Digital Corp. (United States of America))

https://doi.org/10.7567/SSDM.2023.E-4-03

By utilizing transmission electron microscopy (TEM), it is proposed that a new model of inhibit factors of Metal Induced Lateral Crystallization (MILC) comparing the two different Metal Induced Lateral Crystallization (MILC) methods. Two types of MILC methods have dif-ferent crystallinity corresponding to cell current distri-bution. Comparing these two methods, it is found that the median value of cell current (Icell) of single MILC method is better, while lower tail of Icell is better for regional MILC method for 3D flash memory over 900 word-line (WL) stack.