The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

9:00 AM - 9:15 AM

[E-5-01 (Late News)] Electrical Characteristic Degradation of Ultra-Scaled IGZO-TFTs Induced by Bias- and Temperature-Dependent Hot Carrier Stresses

○Muhammad Aslam1,2, Shu-Wei Chang3, Yao Jen Lee4, Yiming Li1,2,4,5,6,7, Wen-Hsi Lee3 (1. Parallel and Scientific Computing Laboratory, National Yang Ming Chiao Tung Univ. (Taiwan), 2. EECS International Graduate Program, National Yang Ming Chiao Tung Univ. (Taiwan), 3. Department of Electrical Engineering, National Cheng Kung Univ. (Taiwan), 4. Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung Univ. (Taiwan), 5. Institute of Communications Engineering, National Yang Ming Chiao Tung Univ. (Taiwan), 6. Institute of Communications Engineering, National Yang Ming Chiao Tung Univ. (Taiwan), 7. Department of Electronics and Electrical Engineering, National Yang Ming Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2023.E-5-01

We investigate characteristic degradation of ultra-scaled amorphous indium gallium zinc oxide thin film transistors (a-IGZO-TFTs) with a HfO2 gate dielectric under hot carrier stress (HCS). An extraordinary threshold voltage shift (Vth) is observed for all hot carrier stresses. Specifically, a drastic change in Vth shift occurs only when the magnitudes of drain and gate stress are kept the same. The conduction current ratio also corresponds to the Vth trend for all cases of HCS. The relative magnitudes of longitudinal and transverse electric fields determine key mechanism which provides analytical insights for designing stable devices as driving transistors in AMOLED backplanes.