Hydrogen-doped polycrystalline indium oxide (InO_x:H) films show high Hall mobility after solid phase crystallization (SPC), which make it potential material for thin film transistors (TFTs). In this study, InO_x:H films were crystallized by a rapid thermal annealing. Hall mobility of the InO_x:H films decreased with the increase of ramp rate to 250 ℃ due to a reduction of crystalline volume fraction. However, all the InO_x:H films showed almost the same Hall mobility after holding at 250 ℃ for 3min, irrespective of the ramp rate. An InO_x:H film formed by a rapid SPC process could be applied to the TFT with a field effect mobility of 43.7 cm²V⁻¹s⁻¹.