Role of Weakly-bonded and Excess Oxygen in a-In2O3 Thin-Film Transistors

Jiayi Wang

doi:https://doi.org/10.7567/SSDM.2023.E-5-04

09:45 〜 10:00

[E-5-04] Role of Weakly-bonded and Excess Oxygen in a-In2O3 Thin-Film Transistors

^○Jiayi Wang¹, Kuo Zhang^1,2, Yuxuan Li^1,2, Nannan You¹, Yang Xu¹, Ling Li^1,2, Shengkai Wang^1,2 (1. Inst. of Microelectron. of CAS (China), 2. Univ. of CAS (China))

https://doi.org/10.7567/SSDM.2023.E-5-04

The a-In2O3 TFTs with mobility of 50-60 cm2/Vs and enhanced reliability are demonstrated by optimizing channel thickness and thermal treatment conditions. Through comparing O2 and O3 annealing, role of weaklybonded and excess oxygen has been revealed by systematically electrical characteristics and XPS measurement. A schematic model is proposed to illustrate
the annealing induced O behavior.

2023 International Conference on Solid State Devices and Materials

[E-5-04] Role of Weakly-bonded and Excess Oxygen in a-In2O3 Thin-Film Transistors