The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

10:00 AM - 10:15 AM

[E-5-05] Variable Photocurrent Method Characterization of Subgap Defects in In 2O 3 TFT

○Kuo Zhang1,2, Jiayi Wang1, Yang Xu1, Nannan You1, Qian Zhang1,2, Yu Wang1,2, Shengkai Wang1,2 (1. Inst. of Microelectronics of the Chinese Academy of Sci. (China), 2. Univ. of Chinese Academy of Sci. (China))

https://doi.org/10.7567/SSDM.2023.E-5-05

We propose the Variable Photocurrent Method (VPM) as a “light-write-electric-read” method to characterize subgap defects in thin In2O3 TFTs. We demonstrate the VPM in characterizing defects near the bandgap edge by comparing the annealing-induced absorption coefficient in In2O3 TFTs with thin channel layers (~15 nm). Unlike the Constant Photocurrent Method (CPM), adjusting the light source power to maintain a constant current is unnecessary in VPM, which makes it convenient and effective in probing subgap states.