In this study, we aim to fabricate high-performance inversion mode n-channel TFT on polycrystalline Ge at low temperature based on the solid-phase crystallization (SPC) method. We have succeeded in making n-channel TFT on poly-Ge with typical electrical characteristics. However, its fabrication process still contains a high temperature (500 °C) step for S/D activation. In order to decrease the temperature, we are using metal induced dopant activation (MIDA) method and successfully reduced the activation temperature to 360 °C. This combination will open a way to high-performance flexible electronic devices based on SPC Ge.