Compressive Strain Dependence on the Photoluminescence of Epitaxial Ge <sub>1-x</sub>Sn <sub>x</sub> Grown on Ge(100)

Rahmat Hadi SAPUTRO

doi:https://doi.org/10.7567/SSDM.2023.E-8-01

3:30 PM - 3:45 PM

[E-8-01] Compressive Strain Dependence on the Photoluminescence of Epitaxial Ge _1-xSn _x Grown on Ge(100)

^○Rahmat Hadi SAPUTRO^1,2, Tatsuro Maeda³, Ryo Matsumura¹, Naoki Fukata^1,2 (1. NIMS (Japan), 2. Univ. of Tsukuba (Japan), 3. AIST (Japan))

https://doi.org/10.7567/SSDM.2023.E-8-01

Ge_1-xSn_x films were epitaxially grown on Ge(100) by molecular beam epitaxy. The strain distribution and Sn incorporation in the epitaxial film were controlled by modulating growth temperature, growth rate, and initial Sn ratio. Here, we identified the enhancement of PL activity from the increase of in-plane compressive strain in the GeSn with high Sn concentration.

2023 International Conference on Solid State Devices and Materials

[E-8-01] Compressive Strain Dependence on the Photoluminescence of Epitaxial Ge 1-xSn x Grown on Ge(100)

[E-8-01] Compressive Strain Dependence on the Photoluminescence of Epitaxial Ge _1-xSn _x Grown on Ge(100)