Ge single crystal strip having a dominant crystal orientation of (001) was grown in 60nm-thick sputter Ge film by micro-chevron laser scanning method. The single crystal strip continued for more than 2.8 mm. The key for single crystal growth is suppression of ablation by thick cap film with SiO2 interface layer. Raman shift of the single crystal strip was 297.4 cm-1, indicating that the film was with tensile strain.