The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

2:00 PM - 2:15 PM

[F-1-01] Gate-Length Dependent Variability of nMOSFET at Cryogenic Temperatures

Toshitsugu Sakamoto1, Makoto Miyamura1, ○Kazunori Funahashi1, Munehiro Tada1, Ken Uchida2, Hiroki Ishikuro3 (1. NanoBridge Semiconductor, Inc. (Japan), 2. Univ. of Tokyo (Japan), 3. Keio Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.F-1-01

We evaluate the 3σ-variability of the threshold voltage (VTH) and the drain current (ID) of 1.2V and 2.5V nMOSFET, operated at 4.2K, for the first time. nMOSFET is fabricated from a commercial 65nm bulk CMOS technology.