Demonstration of Cavity Capacitor for Advanced Nanosheet Gate Stack Study

Camila Cavalcante

doi:https://doi.org/10.7567/SSDM.2023.F-1-03

14:30 〜 14:45

[F-1-03] Demonstration of Cavity Capacitor for Advanced Nanosheet Gate Stack Study

^○Camila Cavalcante¹, H. Arimura¹, Y. Oniki¹, F. Sebaai¹, E. Capogreco¹, L-A. Ragnarsson¹, B.T. Chan¹, A. Hikavyy¹, H. Mertens¹, K. Vandersmissen¹, E. Dentoni Litta¹, S. Subramanian¹, S. Biesemans¹, N. Horiguchi¹ (1. imec (Belgium))

https://doi.org/10.7567/SSDM.2023.F-1-03

In this work, we demonstrate a novel cavity capacitor for the study of gate stacks in confined spaces. We report functional MOS capacitors, and key process enablers are discussed. This work paves the way to study the behavior of HKMG stacks in gate-all-around devices such as nanosheets, forksheets, and CFETs.

2023 International Conference on Solid State Devices and Materials

[F-1-03] Demonstration of Cavity Capacitor for Advanced Nanosheet Gate Stack Study