The Frequency Response Properties of Interface Traps at the HfO <sub>2</sub>/Si Interface Using an Ultrafast DLTS Method

Luping Wang

doi:https://doi.org/10.7567/SSDM.2023.F-1-04

14:45 〜 15:00

[F-1-04] The Frequency Response Properties of Interface Traps at the HfO ₂/Si Interface Using an Ultrafast DLTS Method

^○Luping Wang¹, Junkang Li¹, Rui Zhang¹ (1. Zhejiang Univ. (China))

https://doi.org/10.7567/SSDM.2023.F-1-04

A new ultrafast DLTS measurement method has been developed to get the frequency response characteristics of interface traps. The test method has a simple and convenient structure and accurate test results at high frequencies.Overall, this represents a significant advancement in MOS transistor characterization, especially for high-frequency applications.

2023 International Conference on Solid State Devices and Materials

[F-1-04] The Frequency Response Properties of Interface Traps at the HfO 2/Si Interface Using an Ultrafast DLTS Method

[F-1-04] The Frequency Response Properties of Interface Traps at the HfO ₂/Si Interface Using an Ultrafast DLTS Method