The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

15:15 〜 15:30

[F-1-06] Assessment of Traps-induced Noise in FDSOI MOSFETs

○Jinghan Xu1, Mengqi Fan1, Zixuan Sun1, Fei Liu1, Xiaoyan Liu1 (1. Peking University (China))

https://doi.org/10.7567/SSDM.2023.F-1-06

The trap-induced noise characteristics of fully-depleted SOI (FDSOI) MOSFETs with Ultra-Thin Body and Buried Oxide (UTBB) are essential for high-performance applications. However, accurate noise modeling and trap identification of the device remains challenging. In this work, we study the noise characteristics of FDSOI MOSFETs arising from traps in both gate dielectric and buried oxide, providing insights for identifying trap profiles from noise measurement results.