The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

09:00 〜 09:15

[F-3-01] First Demonstration of SiGe/Si Super-Lattice Ferroelectric HfZrO 2 Multibit FinFET for Nonvolatile Memory

○Tsai- Jung Lin1, Yi-Ju Yao1, Ting-Yu Tseng2, Ching-Ru Yang2, Heng-Jia Chang2, Guang-Li Luo3, Fu-Ju Hou3, Yung-Chun Wu2 (1. College of Semiconductor Research, National Tsing Hua University (Taiwan), 2. Department of Engineering and System Science, National Tsing Hua University (Taiwan), 3. Taiwan Semiconductor Research Institute (Taiwan))

https://doi.org/10.7567/SSDM.2023.F-3-01

This research investigated the use of SiGe/Si heterostructure superlattice channel ferroelectric FinFETs for multilevel cell memory. The SiGe/Si SL MLC Fe-FinFET demonstrated a high switching speed of 100 ns and a large memory window of 1.5 V. Moreover, the devices exhibited an endurance of more than 104 cycles for each state, and a data retention time of more than 104 seconds with no decrease in performance, showing the possibility of using low operating voltage memory applications.