The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

09:15 〜 09:30

[F-3-02] Reliability Improvement of MFM Capacitors by Ozone Treatment on Bottom TiN Electrode

○Haoji Qian1, Rongzong Shen1, Jiajia Chen1, Gaobo Lin1, Minglei Ma2, Jiacheng Xu1, Chengji Jin1, Yan Liu2, Xiao Yu1, Genquan Han2 (1. Zhejiang Lab. (China), 2. Xidian University (China))

https://doi.org/10.7567/SSDM.2023.F-3-02

We have experimentally demonstrated that the TiN/ Hf0.5Zr0.5O2 (HZO)/TiN capacitances with ozone processed TiN electrode own better reliability than the one without treatment, especially for endurance properties. The former did not show any sign of fatigue even after 107 cycles at 4 MV/cm. In addition, the samples after treatment were less influenced by imprint effect. The improvement of reliability for ozone processed HZO capacitances could be attributed to the lower concentration of oxygen vacancies (Vo) in the interfacial layer (IL) of HZO film and TiN electrode.