The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

09:30 〜 09:45

[F-3-03] Impact of the dielectric layer on Wake-up Effect of HZO-based Thin Films

○Min Liao1, Junshuai Chai1, Jinjuan Xiang2, Kai Han3, Yanrong Wang4, Hao Xu1, Xiaolei Wang1, Jing Zhang4, Wenwu Wang1 (1. Institute of Microelectronics Chinese Academy of Sciences (China), 2. Beijing Superstring Academy of Memory Tech. (China), 3. Weifang Univ. (China), 4. North China Univ.of Tech. (China))

https://doi.org/10.7567/SSDM.2023.F-3-03

Hf0.5Zr0.5O2 (HZO) films have attracted widespread attention due to their good compatibility with CMOS processes. However, there is still a lack of basic guidelines for wake-up free device design. In this work, we systematically investigate the wake-up effect of metal/ferroelectric/metal (MFM). We successfully fabricated wake-up free devices by inserting a dielectric layer on top of the HZO. Our results show that when the annealing temperature exceeds 450 ℃, the metal/dielectric layer/ferroelectric/metal (MIFM) exhibits wake-up free behavior. The dielectric layer can suppress the scavenging effect of TiN and domain pinning.