The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

09:45 〜 10:00

[F-3-04] Improved Anti-fatigue and Fatigue Recovery Capability of the HfO 2-ZrO 2 Ferroelectric Capacitors with Superlattice Structure

○Mingshuang Kang1, Yue Peng1, Wenwu Xiao2, Yan Liu1, Genquan Han1,3, Yue Hao1 (1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University (China), 2. Xi'an UniIC Semiconductors Company Ltd. (China), 3. Hangzhou Institute of Technology, Xidian University, Hangzhou (China))

In this work, different HfO2-ZrO2 superlattice (SL) structure ferroelectric films were grown by atomic layer deposition (ALD) and studied systematically. The HfZrOx (HZO) alloy was used as a comparison device. Compared to the HZO capacitor, the SL capacitors could effectively suppress the defects diffusion during the P-V cycling, thus effectively improving the anti-fatigue characteristics and the fatigue recovery capability. The results indicate that the SL structure has high potential in future ferroelectric memory applications with excellent stability and recovery capability.