The Japan Society of Applied Physics

11:30 〜 11:45

[F-4-04] Integrate-and-Fire Operation with Signal Amplification by using “Dual-Gate PN-Body Tied SOI-FET”

Haruki Yonezaki1, Takayuki Mori1, Jiro Ida1 (1. Kanazawa Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2023.F-4-04

Spiking neural networks (SNNs), inspired by the brain, are possible for low power consumption because of event-driven and spike operations. Large-scale neuromorphic hardware with SNN requires spike operation with a single device and much fan-out corresponding to increased synapse connection. In this study, we demonstrated that dual-gate PN-Body tied silicon on insulator-filed effect transistor (DG PNBT SOI-FET) could reproduce integrate-and-fire-like behavior, and we confirmed the dependence of the current amplifier factor on gate length.