9:30 AM - 9:45 AM
[F-5-02] Crystallinity and Composition of Sc / Si:P System for Advanced Contact Applications
Sc contacts to Si:P have shown great potential for NMOS devices. However, the promising properties of this material system are not fully understood. This work provides new insights into the crystallinity and composition of sinter annealed TiN / Sc / Si:P stacks. After silicidation, two distinct phases are evidenced, with orthorhombic ScSi lying atop a thin Sc1-x-ySixPy interfacial layer that is lattice matched with the underlaid Si:P, of prime importance for lowering the contact resistance. The formed ScSi phase is thermally stable up to ~ 700°C and its evolution is imaged across a large temperature range.
