The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

09:45 〜 10:00

[F-5-03] Epitaxial SiGe/Si Multi-Stacks for CFET Devices

○Roger Loo1, Yosuke Shimura1, Anjani Akula1, Clement Porret1, Alex Merkulov1, Mustafa Ayyad1, Han Han1, Olivier Richard1, Andrea Impagnatiello1, Andriy Hikavyy1 (1. Imec (Belgium))

https://doi.org/10.7567/SSDM.2023.F-5-03

The material properties of complicated SiGe/Si multi-layer stacks used for CFET devices will be presented. The epitaxial layers contain two different Ge concentrations and have been grown using conventional process gases. Despite the relative high growth temperature, island growth can be suppressed for Ge concentrations up to 40%. Excellent material properties will be reported with improved surface morphology and reduced defectivity compared to the previously used low temperature growth process relying on higher order precursors.