The epitaxial growth and the material properties of buried strained Ge on top of Si_0.3Ge_0.7 strain relaxed buffers, which is a promising channel material for hole spin qubit applications, are demonstrated on 300 mm Si wafers. The strain relaxation is sensitive to the thickness of the Ge layer and the growth temperature. Steep Si_0.3Ge_0.7/Ge interfaces will be demonstrated for a sufficiently low growth temperature suppressing Ge segregation into the Si_0.3Ge_0.7 cap. From Hall-bar measurements at 10 K, a peak mobility of 2.7×10⁵ cm²/Vs and a percolation density of 3×10¹⁰ cm^-2 has been extracted further illustrating the high material quality.